Invention Grant
- Patent Title: Image sensor and method for fabricating the same
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Application No.: US15145300Application Date: 2016-05-03
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Publication No.: US10032811B2Publication Date: 2018-07-24
- Inventor: Yeoun-Soo Kim , Kyoung-Oug Ro , Jong-Hyun Je , Do-Hwan Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0104760 20130902
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.
Public/Granted literature
- US20160247844A1 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-08-25
Information query
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