Invention Grant
- Patent Title: Light-emitting device
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Application No.: US15345677Application Date: 2016-11-08
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Publication No.: US10032840B2Publication Date: 2018-07-24
- Inventor: Shunpei Yamazaki , Jun Koyama , Mai Osada
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2000-054963 20000229
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L29/786 ; H01L27/12 ; G09G3/3233 ; G09G3/3275 ; G09G3/3266

Abstract:
There is provided a semiconductor device including a first pixel and a second pixel each including a transistor and an EL element including a pixel electrode electrically connected to the transistor. A ratio of a channel width (W) to a channel length (L) of the transistor in the first pixel is different from a ratio of a channel width (W) to a channel length (L) of the transistor in the second pixel.
Public/Granted literature
- US20170154940A1 Light-Emitting Device Public/Granted day:2017-06-01
Information query
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