Invention Grant
- Patent Title: Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods for manufacturing the same
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Application No.: US15582823Application Date: 2017-05-01
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Publication No.: US10032920B2Publication Date: 2018-07-24
- Inventor: Hitoshi Hamaguchi , Kenrou Tanaka , Kenzou Ookita , Keisuke Kuriyama
- Applicant: JSR Corporation
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Typha IP LLC
- Priority: JP2014-223718 20141031
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/66 ; H01L21/288
Abstract:
The thin film transistor includes a first insulating layer provided on a substrate; a source electrode and a drain electrode that are provided on the first insulating layer; a semiconductor layer provided so as to cover the first insulating layer, the source electrode, and the drain electrode; a second insulating layer provided on the semiconductor layer; and a gate electrode provided on the second insulating layer, in which the first insulating layer is formed of a hydrophilic/hydrophobic material and has a recess portion, and the source electrode and the drain electrode are provided so as to fill the recess portion of the first insulating layer.
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