Invention Grant
- Patent Title: Method of manufacturing photoelectric conversion element, photoelectric conversion element, and photoelectric conversion device
-
Application No.: US15363199Application Date: 2016-11-29
-
Publication No.: US10032941B2Publication Date: 2018-07-24
- Inventor: Manabu Kudo
- Applicant: Seiko Epson Corporation
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2015-248014 20151218
- Main IPC: H01L31/103
- IPC: H01L31/103 ; H01L31/0224 ; H01L31/18 ; H01L31/0232

Abstract:
A method of manufacturing a photoelectric conversion element including a semiconductor layer includes: forming an electrode; forming an insulating layer covering the electrode; forming an opening in a region of the insulating layer overlapping the electrode in a plan view; forming a covering layer of a semiconductor material on a surface of the insulating layer; and forming the semiconductor layer by patterning the covering layer. In the forming of the semiconductor layer, the semiconductor layer is formed such that an outer circumferential edge of the semiconductor layer is located on the outside of an inner circumferential edge of the opening in the plan view.
Public/Granted literature
Information query
IPC分类: