Invention Grant
- Patent Title: Seed crystal substrates, composite substrates and functional devices
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Application No.: US14742798Application Date: 2015-06-18
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Publication No.: US10032958B2Publication Date: 2018-07-24
- Inventor: Shuuhei Higashihara , Makoto Iwai
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Aichi-prefecture
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Aichi-prefecture
- Agency: Cermak Nakajima & McGowan LLP
- Agent Tomoko Nakajima
- Priority: JP2012-278103 20121220
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/32 ; C30B19/12 ; H01L33/20 ; H01L21/02 ; C30B9/10 ; C30B19/02 ; C30B29/40 ; H01L33/16 ; H01L33/12

Abstract:
A seed crystal substrate 8 includes a base body 1 and a plurality of rows of stripe-shaped seed crystal layers 3 formed on the base body 1. An upper face 3a of the seed crystal layer 3 is (11-22) plane, a groove 4 is formed between the adjacent seed crystal layers 3, and a longitudinal direction of the groove 4 is a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.
Public/Granted literature
- US20150287884A1 Seed Crystal Substrates, Composite Substrates and Functional Devices Public/Granted day:2015-10-08
Information query
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