Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15515297Application Date: 2015-03-30
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Publication No.: US10037932B2Publication Date: 2018-07-31
- Inventor: Atsushi Nishikizawa , Yuichi Yato , Hiroi Oka , Tadatoshi Danno , Hiroyuki Nakamura
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- International Application: PCT/JP2015/060024 WO 20150330
- International Announcement: WO2016/157394 WO 20161006
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/495 ; H01L23/31 ; H01L21/48 ; H01L21/56

Abstract:
In a resin sealing type semiconductor device, a semiconductor chip CP2 is mounted over a die pad DP having conductivity via a bonding member BD2 having insulation property, and a semiconductor chip CP1 is mounted over the die pad DP via a bonding member BD1 having conductivity. A first length of a portion, in a first side formed by an intersection of a first side surface and a second side surface of the semiconductor chip CP2, covered with the bonding member BD2 is larger than a second length of a portion, in a second side formed by an intersection of a third side surface and a fourth side surface of the semiconductor chip CP1, covered with the bonding member BD1.
Public/Granted literature
- US20170221800A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-08-03
Information query
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