A semiconductor device includes an interconnect layer on an inter-layer dielectric (ILD) structure. The ILD structure includes: first contacts, extending through the ILD structure, electrically connected to corresponding first components located in a floor structure underlying the ILD structure; at least one second component located within the ILD structure and spaced from a surface of the ILD structure (in a direction perpendicular to a plane of the ILD structure) a distance which is less than a thickness of the ILD structure; and second contacts directly contacting corresponding first regions of the at least one second component. The interconnect layer includes: first metallization segments which directly contact corresponding ones of the first contacts; and second metallization segments located over a second region of the at least one second component, a width of the second metallization segments being less than a width of the first metallization segments.