Invention Grant
- Patent Title: Thin film transistor array
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Application No.: US14861059Application Date: 2015-09-22
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Publication No.: US10038014B2Publication Date: 2018-07-31
- Inventor: Mamoru Ishizaki
- Applicant: Toppan Printing Co., Ltd.
- Applicant Address: JP Taito-ku
- Assignee: TOPPAN PRINTING CO., LTD.
- Current Assignee: TOPPAN PRINTING CO., LTD.
- Current Assignee Address: JP Taito-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-059410 20130322
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/417 ; H01L29/08

Abstract:
A thin film transistor array including a gate wiring connected to a gate electrode and extended in a first direction, a source wiring connected to a source electrode, a drain electrode having a gap from the source electrode, a semiconductor pattern formed at least in a portion corresponding to the gap between the source and drain electrodes, the semiconductor pattern having a region defined by extending the portion in a second direction perpendicular to the first direction, and a pixel electrode that overlaps with a capacitor electrode in the planar view. In the planar view, the drain electrode has a shape of a single line, the source electrode has a first portion in a line shape and a second portion in a sheath shape surrounding the drain electrode and keeping a space from the drain electrode, and the source wiring is narrower than the region of the semiconductor pattern.
Public/Granted literature
- US20160013213A1 THIN FILM TRANSISTOR ARRAY Public/Granted day:2016-01-14
Information query
IPC分类: