A low electrical and thermal resistance FinFET device includes a semiconductor body, a fin body on the substrate wafer, an isolation structure forming a fin connecting region, a gate dielectric on the fin body extending above the isolation structure, a FinFET gate electrode on the gate dielectric, a heavily-doped buried layer in the semiconductor body extending under said fin, and a vertical conductive region extending from the semiconductor body surface to the heavily-doped buried layer. Additionally, a fin body-to-buried layer implanted region disposed in the fin connecting region provides a low electrical and thermal resistance shunt from the fin body to the heavily-doped buried layer.