Invention Grant
- Patent Title: RF switch with integrated tuning
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Application No.: US14195701Application Date: 2014-03-03
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Publication No.: US10038409B2Publication Date: 2018-07-31
- Inventor: Dan William Nobbe
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Martin J. Jacquez, Esq.; Alessandro Steinfl, Esq.
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H04B1/44 ; H04B17/12 ; H04B7/015 ; H04B7/02 ; H04B15/00 ; H04B1/18 ; H03F3/193 ; H03F3/21 ; H04B1/525 ; H03F3/195 ; H03F3/213 ; H04L27/20 ; H03F3/04

Abstract:
Methods and devices are described for reducing receiver complexity in an RF front-end stage. In one exemplary implementation, a switch is used to connect a plurality of receive paths to a single input amplifier of a transceiver unit used the RF front-end stage. In another exemplary implementation, the switch has a tunable network which can be tuned with respect to various frequencies of operation of the receive path and associated RF signal.
Public/Granted literature
- US20150249479A1 RF Switch with Integrated Tuning Public/Granted day:2015-09-03
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