Invention Grant
- Patent Title: Method for producing nitride crystal
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Application No.: US15238945Application Date: 2016-08-17
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Publication No.: US10041186B2Publication Date: 2018-08-07
- Inventor: Katsuhiro Imai , Makoto Iwai , Masahiro Sakai , Takanao Shimodaira , Shuhei Higashihara , Takayuki Hirao
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Aichi-prefecture
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Aichi-prefecture
- Agency: Cermak Nakajima & McGowan LLP
- Agent Tomoko Nakajima
- Priority: JP2014-046407 20140310
- Main IPC: C30B9/06
- IPC: C30B9/06 ; C30B9/12 ; C30B29/38 ; C30B9/00 ; C30B29/40

Abstract:
It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.
Public/Granted literature
- US20160355945A1 Method for Producing Nitride Crystal Public/Granted day:2016-12-08
Information query
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