Invention Grant
- Patent Title: MOS capacitors for variable capacitor arrays and methods of forming the same
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Application No.: US15085572Application Date: 2016-03-30
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Publication No.: US10042376B2Publication Date: 2018-08-07
- Inventor: Rien Gahlsdorf , Jianwen Bao
- Applicant: TDK Corporation
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Nixon Peabody LLP
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/24 ; G05F3/20 ; H03H7/01 ; H03H7/12 ; H01L29/66 ; H01L29/94 ; H03H7/40 ; H03H7/46
Abstract:
A capacitor structure is described. The capacitor structure includes a substrate, a plurality of source/drain regions formed in the substrate, and a plurality of gates formed above the substrate. The plurality of gates formed above the substrate such that each of the plurality of gates is formed between each pair of source/drain regions of the plurality of source/drain regions to form a channel between each pair of source/drain regions.
Public/Granted literature
- US20160294366A1 MOS CAPACITORS FOR VARIABLE CAPACITOR ARRAYS AND METHODS OF FORMING THE SAME Public/Granted day:2016-10-06
Information query
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