SRAM structures are provided. A SRAM structure includes multiple SRAM cells arranged in multiple rows and multiple columns. The SRAM cells in the same row are divided into multiple groups. Each group includes a first SRAM cell and a second SRAM cell adjacent to the first SRAM cell. The first and second Vss lines and the first and second word-line landing pads are formed in a first metallization layer and extend parallel to a first direction. The third Vss line and the first word line are formed in a second metallization layer and extend parallel to a second direction. The first word-line landing pad is positioned within the rectangular shape of the first or second SRAM cell, and the second word-line landing pad is positioned within the rectangular shape of the second SRAM cell. The second metallization layer is positioned on the first metallization layer.