Invention Grant
- Patent Title: Method of forming semiconductor substrate
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Application No.: US13681119Application Date: 2012-11-19
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Publication No.: US10043662B2Publication Date: 2018-08-07
- Inventor: Jean-Pierre Faurie , Bernard Beaumont
- Applicant: Jean-Pierre Faurie , Bernard Beaumont
- Applicant Address: FR Courbevoie
- Assignee: SAINT-GOBAIN CRISTAUX ET DETECTEURS
- Current Assignee: SAINT-GOBAIN CRISTAUX ET DETECTEURS
- Current Assignee Address: FR Courbevoie
- Agency: Abel Law Group, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method of forming a semiconductor substrate including forming a base layer of a Group 13-15 material on a growth substrate during a growth process, forming a mask having mask regions and gap regions overlying the base layer during the growth process, and preferentially removing a portion of the base layer underlying the mask during the growth process.
Public/Granted literature
- US20130143394A1 SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING Public/Granted day:2013-06-06
Information query
IPC分类:
