Invention Grant
- Patent Title: Method for fabricating metal gate structure
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Application No.: US15412066Application Date: 2017-01-23
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Publication No.: US10043669B2Publication Date: 2018-08-07
- Inventor: Shao-Ping Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW106100269A 20170105
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/165 ; H01L21/28 ; H01L29/49 ; H01L21/22 ; H01L21/38 ; H01L29/51 ; H01L21/02
Abstract:
A method for fabricating a metal gate structure includes following steps. A substrate is provided and followed by forming a high-K dielectric layer on the substrate. Then, an oxygen-containing titanium nitride layer is formed on the high-K dielectric layer. Next, an amorphous silicon layer is formed on the oxygen-containing titanium nitride layer and followed by performing an annealing process to drive oxygen in the oxygen-containing titanium nitride layer to the high-K dielectric layer.
Public/Granted literature
- US20180190499A1 METHOD FOR FABRICATING METAL GATE STRUCTURE Public/Granted day:2018-07-05
Information query
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