Invention Grant
- Patent Title: Memory device and method of forming thereof
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Application No.: US15423771Application Date: 2017-02-03
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Publication No.: US10043705B2Publication Date: 2018-08-07
- Inventor: Yen-Chang Chu , Yao-Wen Chang , Sheng-Chau Chen , Alexander Kalnitsky
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L45/00 ; H01L27/22 ; H01L27/24 ; H01L23/522

Abstract:
A memory device includes a dielectric structure, a tungsten plug, a bottom electrode, a resistance switching element and a top electrode. The dielectric structure has an opening. The tungsten plug is embedded in the opening of the dielectric structure. The bottom electrode extends along top surfaces of the dielectric structure and the tungsten plug. The resistance switching element is present over the bottom electrode. The top electrode is present over the resistance switching element.
Public/Granted literature
- US20180158728A1 MEMORY DEVICE AND METHOD OF FORMING THEREOF Public/Granted day:2018-06-07
Information query
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