- Patent Title: Compound semiconductor device and method of manufacturing the same
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Application No.: US15043882Application Date: 2016-02-15
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Publication No.: US10043727B2Publication Date: 2018-08-07
- Inventor: Shirou Ozaki , Naoya Okamoto
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2015-032230 20150220
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L23/29 ; H01L21/02 ; H02M3/335 ; H03F3/19 ; H03F1/32 ; H03F3/195 ; H01L23/31 ; H02M1/42 ; H02M3/337
Abstract:
A compound semiconductor device includes a first protection film which covers a surface of a compound semiconductor layer, where the first protection film is an insulating film whose major constituent is Si and at least one element between N and O, and a hydrophobic layer containing Si—CxHy is formed at a surface thereof.
Public/Granted literature
- US20160247740A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-08-25
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