Semiconductor devices and methods are provided in which vertical fuse devices are integrally formed with FINFET (Fin Field Effect Transistor) devices, wherein the vertical fuse devices are formed as part of a process flow for fabricating the FINFET devices. For example, a semiconductor device comprises first and second vertical semiconductor fins, a vertical fuse device, and a FINFET device. The vertical fuse device comprises a metal fuse element formed over a portion of the first vertical semiconductor fin, and the FINFET device comprises a metal gate electrode formed over a portion of the second vertical semiconductor fin. The metal fuse element and the metal gate electrode are concurrently formed as part of a replacement metal gate process flow.