Provided is a semiconductor device in which a fuse element, which is cuttable by a laser, can be stably cut. The fuse element includes an upper fuse element, a lower fuse wiring line, and a fuse connecting contact such that, in cutting the fuse element by a laser, the lower fuse wiring line is protected by an inter-layer film, and only the upper fuse element is efficiently melted and evaporated. In addition, the contact for connecting the upper fuse element and the lower fuse wiring line to each other is formed at a center of a laser irradiation region, and hence the connection portion receives the energy of the laser most efficiently.