Invention Grant
- Patent Title: Substrate contact using dual sided silicidation
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Application No.: US15245087Application Date: 2016-08-23
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Publication No.: US10043752B2Publication Date: 2018-08-07
- Inventor: Perry Wyan Lou , Sinan Goktepeli
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L21/8234 ; H01L29/45 ; H01L23/66
Abstract:
An integrated circuit device may include a front-side contact coupled to a front-side metallization. The integrated circuit device may further include a backside contact coupled to a backside metallization. The front-side contact may be directly coupled to the backside contact.
Public/Granted literature
- US20180061760A1 SUBSTRATE CONTACT USING DUAL SIDED SILICIDATION Public/Granted day:2018-03-01
Information query
IPC分类:
