Invention Grant
- Patent Title: Overlay mark
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Application No.: US14551653Application Date: 2014-11-24
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Publication No.: US10043759B2Publication Date: 2018-08-07
- Inventor: Chen-Yu Chen , Ming-Feng Shieh , Ching-Yu Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/544
- IPC: H01L23/544 ; G03F7/20 ; H01L21/302 ; H01L29/06 ; H01L29/78

Abstract:
An overlay mark comprises a first feature in a first layer. The first feature has a length extending in a first longitudinal direction and a width extending in a second longitudinal direction. The length of the first feature is greater than the width of the first feature. The overlay mark also comprises a second feature in a second layer over the first layer. The second feature has a length extending in the second longitudinal direction and a width extending in the first longitudinal direction. The length of the second feature is greater than the width of the second feature. The overlay mark further comprises a third feature in a third layer over the second layer. The third feature is a box-shaped opening in the third layer.
Public/Granted literature
- US20150076613A1 OVERLAY MARK Public/Granted day:2015-03-19
Information query
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