Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15259441Application Date: 2016-09-08
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Publication No.: US10043762B2Publication Date: 2018-08-07
- Inventor: Toshiya Tadakuma , Toma Takao
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2016-007556 20160119
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/31 ; H01L23/495 ; H01L23/00 ; H01L25/07

Abstract:
A semiconductor device includes a plurality of semiconductor elements including a power semiconductor element, a lead frame including one main surface on which the plurality of semiconductor elements are mounted, a resin that seals the plurality of semiconductor elements and a part of the lead frame where the plurality of semiconductor elements are mounted, and at least one shield member disposed above the plurality of semiconductor elements on a side of the one main surface of the lead frame. The shield member is held by the resin, and the shield member has a higher magnetic permeability or a higher electrical conductivity than the resin.
Public/Granted literature
- US20170207178A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-07-20
Information query
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