Invention Grant
- Patent Title: LDMOS design for a FinFET device
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Application No.: US15471983Application Date: 2017-03-28
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Publication No.: US10043804B2Publication Date: 2018-08-07
- Inventor: Fei Zhou
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201610423223 20160615
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/092 ; H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L29/49 ; H01L29/423 ; H01L29/08
Abstract:
A method of manufacturing a semiconductor device is provided. The device includes a substrate including a first type region and a second type region, first and second fins protruding from the substrate and separated by a trench. The first fin includes first and second portions of the first type on the first region and a third portion of the second type on the second region. A first gate structure surrounds the second portion and the third portion. A first work function adjusting layer is on the gate insulator layer on the first and second portions. A second work function adjusting layer is on the first work function adjusting layer, the gate insulator layer on the third portion, and the first insulator layer. The device also includes a gate on the second work function adjusting layer, a hardmask layer on the gate, and an interlayer dielectric layer surrounding the gate structure.
Public/Granted literature
- US20170365602A1 LDMOS DESIGN FOR A FINFET DEVICE Public/Granted day:2017-12-21
Information query
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