Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US15674135Application Date: 2017-08-10
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Publication No.: US10043815B2Publication Date: 2018-08-07
- Inventor: Mikiko Mori , Ryota Suzuki , Tatsuya Kato , Wataru Sakamoto , Fumie Kikushima
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11524 ; H01L27/11529
Abstract:
A semiconductor device according to an embodiment includes two semiconductor pillars, a connection member connected between the two semiconductor pillars, and a contact connected to the connection member. There is not a conductive member disposed between the two semiconductor pillars.
Public/Granted literature
- US20170345837A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2017-11-30
Information query
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