Invention Grant
- Patent Title: Method for forming a semiconductor structure
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Application No.: US15391048Application Date: 2016-12-27
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Publication No.: US10043888B2Publication Date: 2018-08-07
- Inventor: Yi-Hui Lin , Keng-Jen Lin , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/762 ; H01L21/3205 ; H01L21/321 ; H01L21/3213 ; H01L29/78 ; H01L21/8234
Abstract:
A method for forming a semiconductor structure includes the following steps. First, a preliminary structure is provided. The preliminary structure includes a substrate and a plurality of fins formed on the substrate. Then, a first polysilicon layer is formed on the substrate. The first polysilicon layer covers at least portions of the fins. An amorphous silicon layer is formed on the first polysilicon layer.
Public/Granted literature
- US20180182862A1 METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE Public/Granted day:2018-06-28
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