Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15798209Application Date: 2017-10-30
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Publication No.: US10043895B2Publication Date: 2018-08-07
- Inventor: Hitoshi Matsuura
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2016-040904 20160303
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8249 ; H01L29/739 ; H01L29/10

Abstract:
A linear active cell region is formed from a plurality of divided active cell regions arranged apart from each other in a second direction (y direction). The linear hole collector cell region is formed from a plurality of divided hole collector cell regions arranged apart from each other in the second direction (y direction). A P-type floating region is formed in a semiconductor substrate between the linear active cell region and the linear hole collector cell region adjacent to each other in a first direction (x direction), between the divided active cell regions adjacent to each other in the second direction (y direction), and between the divided hole collector cell regions adjacent to each other in the second direction (y direction).
Public/Granted literature
- US20180047838A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-02-15
Information query
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