Invention Grant
- Patent Title: Back contact layer for photovoltaic cells
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Application No.: US14421718Application Date: 2013-08-13
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Publication No.: US10043922B2Publication Date: 2018-08-07
- Inventor: Michael J. Heben , Adam B. Phillips , Rajendra R. Khanal , Victor V. Plotnikov , Alvin D. Compaan
- Applicant: The University of Toledo
- Applicant Address: US OH Toledo
- Assignee: The University Of Toledo
- Current Assignee: The University Of Toledo
- Current Assignee Address: US OH Toledo
- Agency: MacMillan, Sobanski & Todd, LLC
- International Application: PCT/US2013/054783 WO 20130813
- International Announcement: WO2014/028526 WO 20140220
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/073 ; H01L31/0725 ; H01L31/076 ; B82Y10/00 ; B82Y20/00 ; H01L31/0216 ; H01L31/075 ; H01L31/18 ; H01L31/02 ; H01L31/077

Abstract:
A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.
Public/Granted literature
- US20150221790A1 Back Contact Layer for Photovoltaic Cells Public/Granted day:2015-08-06
Information query
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