A dynamic random access memory (DRAM) has a main memory cell array and a redundant component unit. The redundant component unit includes a plurality of e-fuses and a latch region. The plurality of the e-fuses are arranged into a first e-fuse part and a second e-fuse part, wherein the first e-fuse part is used to store address information of a fault memory cell in the main memory cell array and the second e-fuse part is used as a plurality of capacitors. The latch region includes a plurality of latches used to store the address information of the fault memory cell stored in the first e-fuse part, wherein the plurality of the capacitors of the second e-fuse part are respectively coupled to the plurality of the latches to provide a capacitance value for an input/output (I/O) endpoint of each of the latches.