Invention Grant
- Patent Title: Patterning magnetic films using self-stop electro-etching
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Application No.: US15587685Application Date: 2017-05-05
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Publication No.: US10049802B2Publication Date: 2018-08-14
- Inventor: Eugene J. O'Sullivan , David L. Rath , Naigang Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01F10/16 ; H01F27/28 ; H01F27/24 ; H01F7/06 ; H01F41/04 ; H01L49/02
Abstract:
A semiconductor structure includes a substrate and a patterned magnetic feature disposed over a top surface of the substrate. The patterned magnetic feature is a magnetic material, and has undercut sidewalls providing a self-stop for electro-etching of the magnetic material. The semiconductor structure may form a closed-yoke inductor or a solenoid inductor.
Public/Granted literature
- US20180102207A1 PATTERNING MAGNETIC FILMS USING SELF-STOP ELECTRO-ETCHING Public/Granted day:2018-04-12
Information query
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