- Patent Title: System and method for damage reduction in light-assisted processes
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Application No.: US14528938Application Date: 2014-10-30
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Publication No.: US10049886B2Publication Date: 2018-08-14
- Inventor: Yi-Hung Lin , Sheng-Shin Lin , Ying-Chieh Hung , Yu-Ting Huang , Tze-Liang Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/3105 ; H01L23/532 ; H01L21/768
Abstract:
A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.
Public/Granted literature
- US20160126105A1 System and Method for Damage Reduction in Light-Assisted Processes Public/Granted day:2016-05-05
Information query
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