Invention Grant
- Patent Title: Method for thinning substrates
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Application No.: US14946886Application Date: 2015-11-20
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Publication No.: US10049914B2Publication Date: 2018-08-14
- Inventor: Roland Rupp , Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Iris Moder , Ingo Muri
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/762 ; H01L21/265 ; H01L21/306 ; H01L21/324

Abstract:
According to various embodiments, a method may include: providing a substrate having a first side and a second side opposite the first side; forming a buried layer at least one of in or over the substrate by processing the first side of the substrate; thinning the substrate from the second side of the substrate, wherein the buried layer includes a solid state compound having a greater resistance to the thinning than the substrate and wherein the thinning stops at the buried layer.
Public/Granted literature
- US20170148664A1 METHOD FOR THINNING SUBSTRATES Public/Granted day:2017-05-25
Information query
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