Invention Grant
- Patent Title: Method of manufacturing a germanium-on-insulator substrate
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Application No.: US15309989Application Date: 2015-05-22
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Publication No.: US10049916B2Publication Date: 2018-08-14
- Inventor: Kwang Hong Lee , Chuan Seng Tan , Yew Heng Tan , Gang Yih Chong , Eugene A. Fitzgerald , Shuyu Bao
- Applicant: Massachusetts Institute of Technology , Nanyang Technological University
- Applicant Address: US MA Cambridge SG Singapore
- Assignee: Massachusetts Institute of Technology,Nanyang Technological University
- Current Assignee: Massachusetts Institute of Technology,Nanyang Technological University
- Current Assignee Address: US MA Cambridge SG Singapore
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- International Application: PCT/SG2015/050121 WO 20150522
- International Announcement: WO2015/178857 WO 20151126
- Main IPC: H01L21/71
- IPC: H01L21/71 ; H01L21/762 ; H01L21/324 ; H01L21/02 ; H01L21/306
Abstract:
A method of manufacturing a germanium-on-insulator substrate is disclosed. The method comprises: providing (102) a first semiconductor substrate, and a second semiconductor substrate formed with a germanium layer; bonding (102) the first semiconductor substrate to the second semiconductor substrate using at least one dielectric material to form a combined substrate, the germanium layer being arranged intermediate the first and second semiconductor substrates; removing (104) the second semiconductor substrate from the combined substrate to expose at least a portion of the germanium layer with misfit dislocations; and annealing (106) the combined substrate to enable removal of the misfit dislocations from the portion of the germanium layer.
Public/Granted literature
- US20170271201A1 METHOD OF MANUFACTURING A GERMANIUM-ON-INSULATOR SUBSTRATE Public/Granted day:2017-09-21
Information query
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