Invention Grant
- Patent Title: Method of making semiconductor structure having contact plug
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Application No.: US15008453Application Date: 2016-01-28
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Publication No.: US10049929B2Publication Date: 2018-08-14
- Inventor: Ching-Wen Hung , Chih-Sen Huang , Po-Chao Tsao , Chieh-Te Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L29/78 ; H01L23/485 ; H01L29/66 ; H01L21/283 ; H01L21/321 ; H01L23/528 ; H01L29/45 ; H01L29/417 ; H01L23/532 ; H01L29/165
Abstract:
The present invention provides a method of forming a semiconductor structure including a substrate, a transistor, a first ILD layer, a second ILD layer, a first contact plug, second contact plug and a third contact plug. The transistor is disposed on the substrate and includes a gate and a source/drain region. The first ILD layer is disposed on the transistor. The first contact plug is disposed in the first ILD layer and a top surface of the first contact plug is higher than a top surface of the gate. The second ILD layer is disposed on the first ILD layer. The second contact plug is disposed in the second ILD layer and electrically connected to the first contact plug. The third contact plug is disposed in the first ILD layer and the second ILD layer and electrically connected to the gate.
Public/Granted literature
- US20160141207A1 METHOD OF MAKING SEMICONDUCTOR STRUCTURE HAVING CONTACT PLUG Public/Granted day:2016-05-19
Information query
IPC分类:
