Invention Grant
- Patent Title: Semiconductor device package substrate having a fiducial mark
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Application No.: US15447259Application Date: 2017-03-02
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Publication No.: US10049988B2Publication Date: 2018-08-14
- Inventor: Steven A. Atherton
- Applicant: NXP USA, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01B13/00
- IPC: H01B13/00 ; H01L23/544 ; H01L21/48 ; H01L23/498 ; C23F1/00 ; H01L21/768 ; H01L23/528 ; H01L23/532 ; H01L23/535

Abstract:
A method for forming a semiconductor device package substrate including a fiducial mark is provided. The method of forming the package substrate includes forming a dielectric layer over a lower portion of the package substrate. A metal layer is formed over a fiducial region of the package substrate. The metal layer is etched to form a first signal line in the fiducial region. A passivation layer is formed over the first signal line. The passivation layer is etched over the first signal line to form a fiducial mark.
Public/Granted literature
- US20170179038A1 SEMICONDUCTOR DEVICE PACKAGE SUBSTRATE HAVING A FIDUCIAL MARK Public/Granted day:2017-06-22
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