A semiconductor device may include a semiconductor layer, an insulation gate section, and a first conductivity-type semiconductor region; wherein the semiconductor layer may include a vertical drift region being of a second conductivity type and disposed at the one of main surfaces; a body region being of the first conductivity type, adjoining the vertical drift region, and disposed at the one of main surfaces; and a source region being of the second conductivity type, separated from the vertical drift region by the body region, and disposed at the one of main surfaces, wherein the insulation gate section is opposed to a portion of the body region which separates the vertical drift region and the source region; and the first conductivity-type semiconductor region is opposed to at least a part of a portion of the vertical drift region which is disposed at the one of main surfaces.