Invention Grant
- Patent Title: Method of forming a high electron mobility transistor
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Application No.: US15645463Application Date: 2017-07-10
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Publication No.: US10050117B2Publication Date: 2018-08-14
- Inventor: Chun-Wei Hsu , Jiun-Lei Jerry Yu , Fu-Wei Yao , Chen-Ju Yu , Fu-Chih Yang , Chun Lin Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L21/02 ; H01L29/10 ; H01L29/20 ; H01L29/267 ; H01L29/417 ; H01L29/43
Abstract:
A high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. A capping layer is disposed on the second III-V compound layer.
Public/Granted literature
- US20170317184A1 Method of Forming a High Electron Mobility Transistor Public/Granted day:2017-11-02
Information query
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