Invention Grant
- Patent Title: Dual-gate TFT array substrate and manufacturing method thereof, and display device
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Application No.: US15276339Application Date: 2016-09-26
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Publication No.: US10050151B2Publication Date: 2018-08-14
- Inventor: Jing Niu , Xiaogai Chun
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Banner & Witcoff, Ltd.
- Priority: CN201610040520 20160121
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L21/00 ; H01L21/84 ; H01L29/786 ; H01L27/12 ; H01L29/66
Abstract:
A dual-gate TFT array substrate and manufacturing method thereof and a display device are provided. The manufacturing method includes: forming a common electrode and a top-gate electrode through one patterning process. The manufacturing method reduces the times of patterning process and simplifies the process flow.
Public/Granted literature
- US20170213916A1 Dual-Gate TFT Array Substrate and Manufacturing Method Thereof, and Display Device Public/Granted day:2017-07-27
Information query
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