Invention Grant
- Patent Title: Method of manufacturing voice coil
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Application No.: US14940255Application Date: 2015-11-13
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Publication No.: US10050499B2Publication Date: 2018-08-14
- Inventor: Jai Kyoung Choi , Eun Dong Kim , Hyun Hak Jung , Hyeong Min Kim , Jong Hwi Jung , Su Kyung Lim
- Applicant: STS Semiconductor & Telecommunications Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2015-0112670 20150810
- Main IPC: H02K15/04
- IPC: H02K15/04 ; C23F1/00 ; H02K41/035 ; H01F41/04 ; H02K3/26 ; H04R9/00 ; H04R31/00

Abstract:
Provided is a method of manufacturing a voice coil, and more particularly, a method of manufacturing a voice coil in which a coil pattern is formed on a wafer level package. The method includes (a) forming a first coil pattern including a first area in which a first seed metal layer is exposed upward, a second area in which a first passivation layer for forming a via hole in the first area is formed, and a third area in which a first photoresist layer is formed in a portion of the first area and the second area on an upper surface of a wafer, (b) filling an inside of the via hole formed in the first coil pattern with a conductive material and forming first coil windings, and (c) removing the first photoresist layer formed in the third area.
Public/Granted literature
- US20170047831A1 METHOD OF MANUFACTURING VOICE COIL Public/Granted day:2017-02-16
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