Invention Grant
- Patent Title: Power amplifier circuit and semiconductor integrated circuit
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Application No.: US15446821Application Date: 2017-03-01
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Publication No.: US10050587B2Publication Date: 2018-08-14
- Inventor: Kazuaki Oishi , Kouichi Kanda , Shiho Nakahara , Xiao-Yan Wang , Xiongchuan Huang
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Arent Fox LLP
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/24 ; H03F3/195 ; H03F3/68 ; H03F3/45 ; H03F1/22 ; H03F3/21 ; H03F3/60

Abstract:
A power amplifier circuit includes unit amplifiers (unit PAs) whose output terminals are connected to one another, among which a number of unit PAs to be operated is controlled by an amplitude signal indicative of an amplitude of an input signal, and which output output signals based on a phase signal indicative of a phase of the input signal and an output current controller which controls an output current of each of the unit PAs. Each unit PA includes a first transistor and a second transistor connected in series between the output terminal and a ground. The first transistor receives the phase signal at a gate. The second transistor receives at a gate a control signal generated by the output current controller and determines the output current flowing to the output terminal on the basis of the control signal.
Public/Granted literature
- US20170179886A1 POWER AMPLIFIER CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2017-06-22
Information query
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