Invention Grant
- Patent Title: High dynamic range and global shutter image sensor pixels having charge overflow signal detecting structures
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Application No.: US15618899Application Date: 2017-06-09
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Publication No.: US10051214B2Publication Date: 2018-08-14
- Inventor: Jaroslav Hynecek
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Treyz Law Group, P.C.
- Agent Michael H. Lyons; David K. Cole
- Main IPC: H04N5/374
- IPC: H04N5/374 ; H04N5/378 ; H04N5/355 ; H04N5/359 ; H04N5/3745 ; H01L27/146 ; H04N5/353

Abstract:
An image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a charge storage region, and a charge overflow circuit. The charge storage region may be used to operate the image sensor array in global shutter mode. During high light level illumination, the charge overflow circuit may divert charge away from the photodiode such that only a predetermined portion of the accumulated charge remains in the photodiode. During low light level illumination all of the accumulated charge may be stored in the pixel photodiode. The charge overflow circuit may include a transistor and a resistor or capacitor. By implementing a charge overflow circuit, the size of the charge storage region may be reduced while still preserving the high dynamic range and low noise of the image sensor during all light illumination conditions.
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