Invention Grant
- Patent Title: High thermal conductivity region for optoelectronic devices
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Application No.: US15224406Application Date: 2016-07-29
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Publication No.: US10051723B2Publication Date: 2018-08-14
- Inventor: Ravi Kiran Nalla , Raymond Kirk Price
- Applicant: Microsoft Technology Licensing, LLC
- Applicant Address: US WA Redmond
- Assignee: Microsoft Technology Licensing, LLC
- Current Assignee: Microsoft Technology Licensing, LLC
- Current Assignee Address: US WA Redmond
- Main IPC: G02B6/12
- IPC: G02B6/12 ; H05K1/02 ; H05K1/18 ; H05K3/32 ; H05K3/46 ; G02B6/42

Abstract:
This document describes techniques and apparatuses that implement a high thermal conductivity region for optoelectronic devices. In some embodiments, a printed circuit board (PCB) includes a high thermal conductivity region that extends through the PCB. The high thermal conductivity region has first and second surfaces that are approximately coplanar with exterior layers of the PCB. A side-emitting optoelectronic device is mounted to the first surface of the high thermal conductivity region via conductive material that enables conduction of the device's heat into the high thermal conductivity region. The high thermal conductivity region can then transfer the heat away from the device and toward the second surface of the high thermal conductivity region, thereby improving the device's thermal performance.
Public/Granted literature
- US20180035531A1 High Thermal Conductivity Region for Optoelectronic Devices Public/Granted day:2018-02-01
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