Invention Grant
- Patent Title: Multilayer circuit structure
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Application No.: US15461495Application Date: 2017-03-17
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Publication No.: US10051737B2Publication Date: 2018-08-14
- Inventor: Meng-Chi Huang , Tune-Hune Kao
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW104135497A 20151028
- Main IPC: C07F1/00
- IPC: C07F1/00 ; H05K1/11 ; H05K1/03 ; H05K1/09 ; H05K1/16 ; H05K3/00 ; H05K3/42 ; H05K3/10

Abstract:
An insulating colloidal material and a multilayer circuit structure are provided, wherein the insulating colloidal material includes a resin, trigger particles, and an organic solvent. The trigger particles are selected from the group consisting of organometallic particles and ionic compounds. The ratio of the trigger particles to the insulating colloidal material is between 0.1 wt % and 10 wt %. At least one insulating colloidal layer in the multilayer circuit structure contains the trigger particles.
Public/Granted literature
- US20170196085A1 MULTILAYER CIRCUIT STRUCTURE Public/Granted day:2017-07-06
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