Invention Grant
- Patent Title: Methods for forming an electrode device with reduced impedance
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Application No.: US14941784Application Date: 2015-11-16
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Publication No.: US10052476B2Publication Date: 2018-08-21
- Inventor: John P. Seymour
- Applicant: Neuronexus Technologies, Inc.
- Applicant Address: US MI Ann Arbor
- Assignee: NeuroNexus Technologies, Inc.
- Current Assignee: NeuroNexus Technologies, Inc.
- Current Assignee Address: US MI Ann Arbor
- Agency: Haynes and Boone, LLP
- Agent J. Andrew Lowes
- Main IPC: A61N1/36
- IPC: A61N1/36 ; A61N1/04 ; A61N1/05 ; A61B5/04 ; A61B5/00

Abstract:
Improved low-cost, highly reliable methods for increasing the electrochemical surface area of neural electrodes are described. A mono-layer of polymeric nanospheres is first deposited on a metallization supported on a dielectric substrate. The nanospheres self-assemble into generally repeating lattice forms with interstitial space between them. Then, the geometric surface area of the metallization material is increased by either selectively etching part-way into its depth at the interstitial space between adjacent nanospheres. Another technique is to deposit addition metallization material into the interstitial space. The result is undulation surface features provided on the exposed surface of the metallization. This helps improve the electrochemical surface area when the treated metallizations are fabricated into electrodes.
Public/Granted literature
- US20160067473A1 METHODS FOR FORMING AN ELECTRODE DEVICE WITH REDUCED IMPEDANCE Public/Granted day:2016-03-10
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