Invention Grant
- Patent Title: Methods of forming holes and etching surfaces in substrates and substrates formed thereby
-
Application No.: US15222336Application Date: 2016-07-28
-
Publication No.: US10052722B2Publication Date: 2018-08-21
- Inventor: Yung C. Shin
- Applicant: Purdue Research Foundation
- Applicant Address: US IN West Lafayette
- Assignee: Purdue Research Foundation
- Current Assignee: Purdue Research Foundation
- Current Assignee Address: US IN West Lafayette
- Agency: Hartman Global IP Law
- Agent Gary M. Hartman; Domenica N. S. Hartman
- Main IPC: B29C35/08
- IPC: B29C35/08 ; B23K26/362 ; B23K26/384 ; B23K26/402 ; B23K26/06 ; B23K26/0622 ; B23K26/361 ; B29C59/14 ; B29C59/16 ; B29K105/06 ; B29K307/04 ; B23K103/04 ; B23K103/08 ; B23K103/10 ; B23K103/12 ; B29C59/02 ; B23K103/16 ; B23K103/00

Abstract:
Methods capable of forming holes in, etching the surface of, or otherwise ablating substrates, and substrates formed thereby. A first method includes directing a first laser beam pulse towards a substrate to form a hole in a surface thereof and to form a plasma plume at least partially within the hole wherein the plasma plume has insufficient thermal energy and expansion velocity to etch sidewall of the hole, and directing a second laser beam pulse into the plasma plume to increase the temperature and expansion velocity of the plasma plume such that the sidewall is etched causing an increase in the cross-sectional dimension of the hole. A second method includes applying a liquid to a surface of a substrate, and directing a laser beam pulse into the liquid to create plasma on the surface of the substrate that etches portions of the surface of the substrate.
Public/Granted literature
- US20170028510A1 METHODS OF FORMING HOLES AND ETCHING SURFACES IN SUBSTRATES AND SUBSTRATES FORMED THEREBY Public/Granted day:2017-02-02
Information query
IPC分类: