Invention Grant
- Patent Title: Gas-controlled bonding platform for edge defect reduction during wafer bonding
-
Application No.: US15811738Application Date: 2017-11-14
-
Publication No.: US10056272B2Publication Date: 2018-08-21
- Inventor: Wei Lin , Spyridon Skordas , Robert R. Young, Jr.
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Steven J. Meyers
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/67 ; B23K20/02 ; H01L23/00

Abstract:
A wafer bonding method includes placing a top wafer on a top bonding framework including a plurality of outlet holes around a periphery of the top bonding framework. A bottom wafer is placed on a bottom bonding framework that includes a plurality of inlet holes around a periphery of the bottom bonding framework. The top bonding framework is in overlapping relation to the bottom bonding framework such that a gap exist between the top wafer and the bottom wafer. A gas stream is circulated through the gap between the top wafer and the bottom wafer entering the gap through one or more of the plurality of inlet holes and exiting the gap through one or more of the plurality of outlet holes. The gas stream replaces any existing ambient moisture from the gap between the top wafer and the bottom wafer.
Public/Granted literature
- US20180082863A1 GAS-CONTROLLED BONDING PLATFORM FOR EDGE DEFECT REDUCTION DURING WAFER BONDING Public/Granted day:2018-03-22
Information query
IPC分类: