Invention Grant
- Patent Title: High density chip-to-chip connection
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Application No.: US14329717Application Date: 2014-07-11
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Publication No.: US10056352B2Publication Date: 2018-08-21
- Inventor: Thorsten Meyer
- Applicant: Intel IP Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel IP Corporation
- Current Assignee: Intel IP Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L25/10 ; H01L23/538 ; H01L23/52 ; H01L23/00 ; H01L21/56

Abstract:
An apparatus includes at least a first IC die and a second IC die. Bottom surfaces of the first and second IC dice include a first plurality of connection pads and top surfaces of the first and second IC dice include a second plurality of connection pads. The apparatus also includes a layer of non-conductive material covering the top surfaces of the first and second IC dice, a plurality of through-vias, first conductive interconnect between at least a portion of the first plurality of connection pads and at least one through via, and second conductive interconnect on a top surface of the layer of non-conductive material that provides electrical continuity between at least a portion of the second plurality of connection pads and at least one through-via of the plurality of through-vias.
Public/Granted literature
- US20160013153A1 HIGH DENSITY CHIP-TO-CHIP CONNECTION Public/Granted day:2016-01-14
Information query
IPC分类: