Invention Grant
- Patent Title: Fin diode with increased junction area
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Application No.: US15686523Application Date: 2017-08-25
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Publication No.: US10056368B2Publication Date: 2018-08-21
- Inventor: Kasun Anupama Punchihewa , Jagar Singh
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/265 ; H01L29/06 ; H01L29/861 ; H01L29/66 ; H01L21/8234 ; H01L27/08

Abstract:
A diode includes a plurality of fins defined in a semiconductor substrate. An anode region is defined by a doped region in a first surface portion of each of the plurality of fins and in a second surface portion of the semiconductor substrate disposed between adjacent fins in the plurality of fins. The doped region includes a first dopant having a first conductivity type and is contiguous between the adjacent fins. A cathode region is defined by an inner portion of each of the plurality of fins positioned below and contacting the first surface portion and a third portion of the semiconductor substrate positioned below and contacting the second surface portion. The cathode region is contiguous and the dopants in the cathode region and anode region have opposite conductivity types. A junction is defined between the anode region and the cathode region. A first contact interfaces with the anode region.
Public/Granted literature
- US20180006019A1 FIN DIODE WITH INCREASED JUNCTION AREA Public/Granted day:2018-01-04
Information query
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