Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15236707Application Date: 2016-08-15
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Publication No.: US10056460B2Publication Date: 2018-08-21
- Inventor: Shirou Ozaki , Naoya Okamoto
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2015-161314 20150818
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/40 ; H01L29/205 ; H01L29/778 ; H01L29/66 ; H02M3/335 ; H03F3/19 ; H03F1/32 ; H02M3/337 ; H02M1/00
Abstract:
A semiconductor device includes: a semiconductor layer; a first insulating film which covers a surface of the semiconductor layer; a first adhering film which is formed on a surface of the first insulating film and contains a carbonyl group; and a second insulating film which covers a surface of the first adhering film and has a lower dielectric constant than the first insulating film.
Public/Granted literature
- US20170053990A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-02-23
Information query
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