Invention Grant
- Patent Title: Composite masking self-aligned trench MOSFET
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Application No.: US15283044Application Date: 2016-09-30
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Publication No.: US10056461B2Publication Date: 2018-08-21
- Inventor: Sik Lui , Hong Chang
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua Isenberg; Robert Pullman
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/308 ; H01L21/311 ; H01L21/768 ; H01L21/28 ; H01L29/423 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/49 ; H01L29/66 ; H01L29/78
Abstract:
Aspects of the present disclosure discloses a method for fabricating a trench MOSFET device comprising simultaneously forming a narrow trench and a wide trench into a semiconductor substrate using a mask to defines the narrow trench and the wide trench, forming an insulating layer over the semiconductor substrate with a first portion that fills up the narrow trench and a second portion that partially fills the wide trench, removing the second portion from the wide trench completely and leaving the narrow trench filled with the first portion, forming a gate electrode, forming a body region in a top portion of the semiconductor substrate, forming a source region in a portion of the body region, removing the first portion of nitride from the narrow trench, and forming a contact plug by filling a second conductive material in the narrow trench.
Public/Granted literature
- US20180097078A1 COMPOSITE MASKING SELF-ALIGNED TRENCH MOSFET Public/Granted day:2018-04-05
Information query
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