Invention Grant
- Patent Title: Method for producing a semiconductor device including semiconductor pillar and fin
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Application No.: US15672533Application Date: 2017-08-09
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Publication No.: US10056483B2Publication Date: 2018-08-21
- Inventor: Fujio Masuoka , Hiroki Nakamura
- Applicant: Unisantis Electronics Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- Current Assignee: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Brinks Gilson & Lione
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/3205 ; H01L21/02 ; H01L21/283 ; H01L21/306 ; H01L21/31 ; H01L21/311 ; H01L29/16 ; H01L21/3213 ; H01L29/423 ; H01L29/66 ; H01L29/06
Abstract:
A method for producing a semiconductor device includes forming a fin-shaped semiconductor layer on a substrate, forming a first insulating film around the fin-shaped semiconductor layer, and a first metal film is formed around the first insulating film. A pillar-shaped semiconductor layer is formed on the fin-shaped semiconductor layer and a gate insulating film is formed around the pillar-shaped semiconductor layer. A gate electrode is formed around the gate insulating film, the gate electrode being made of a third metal, and a gate line is connected to the gate electrode. A second insulating film is formed around a sidewall of an upper portion of the pillar-shaped semiconductor layer, and a second metal film is formed around the second insulating film.
Public/Granted literature
- US20170338339A1 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE Public/Granted day:2017-11-23
Information query
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